AOD2144 general description product summary v ds i d (at v gs =10v) 120a r ds(on) (at v gs =10v) < 2.3m? r ds(on) (at v gs =4.5v) < 4m? applications 100% uis tested 100% rg tested symbol v ds v gs i dm i as avalanche energy l=0.3mh c e as t j , t stg symbol t 10s steady-state steady-state r jc ? dc motor driver ? synchronous rectification in dc/dc and ac/dc converters power dissipation b 62 t c =100c p d 40 156 gate-source voltage pulsed drain current c 120 g parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.6 50 0.8 va absolute maximum ratings t a =25c unless otherwise noted 20 v maximum units AOD2144 to-252 tape & reel 2500 w i d a 47 a 772 i dsm 32 mj 331 40 120 g 205 i maximum junction-to-ambient a c/w r ja 15 40 20 thermal characteristics parameter max t a =70c 4 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 6.2 power dissipation a t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current t c =25c 40v n-channel mosfet orderable part number package type form minimum order quantity 40v ? trench power mv mosfet technology ? low r ds(on) ? low gate charge ? opitimized ruggedness ? rohs and halogen-free compliant g d s to252 dpak topview bottom view g g d d s s d rev.1.0: november 2017 www.aosmd.com page 1 of 6 downloaded from: http:///
AOD2144 symbol min typ max units bv dss i d =250 a, v gs =0v 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.4 1.9 2.4 v 1.85 2.3 t j =125c 2.5 3.1 2.45 4.0 m? g fs 100 s v sd 0.7 1 v i s 120 a c iss 5225 pf c oss 895 pf c rss 55 pf r g 1 2 3.1 ? q g (10v) 68 95 nc q g (4.5v) 28 40 nc q gs 16.5 nc q gd 4.5 nc q oss output charge v gs =0v, v ds =20v 37 nc t d(on) 12.5 ns t r 9.5 ns t d(off) 57.5 ns t f 10.5 ns t rr 20 ns q rr 60 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage m? i dss a zero gate voltage drain current r ds(on) body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ s turn-off delaytime turn-off fall time v gs =10v, v ds =20v, r l =1 , r gen =3 i f =20a, di/dt=500a/ s turn-on rise time turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance gate-body leakage current diode forward voltage dynamic parameters v gs =4.5v, i d =20a reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz v ds =v gs, i d =250 a output capacitance forward transconductance static drain-source on-resistance i s =1a, v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a v gs =10v, v ds =20v, i d =20a total gate charge gate source charge gate resistance f=1mhz gate drain charge total gate charge switching parameters a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. i. the maximum current rating is silicon limited rev.1.0: november 2017 www.aosmd.com page 2 of 6 downloaded from: http:///
AOD2144 typical electrical and thermal characteristics 0 20 40 60 80 100 120 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 4 0 5 10 15 20 25 30 r ds(on) (m ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =20a v gs =10v i d =20a 0 1 2 3 4 5 2 4 6 8 10 r ds(on) (m ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =20a 25 c 125 c 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =3v 3.3v 4.5v 10v 4v 3.5v rev.1.0: november 2017 www.aosmd.com page 3 of 6 downloaded from: http:///
AOD2144 typical electrical and thermal characteristics 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0 2 4 6 8 10 0 20 40 60 80 v gs (volts) q g (nc) figure 7: gate-charge characteristics 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =20v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) 10 s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 10ms r jc =0.8 c/w rev.1.0: november 2017 www.aosmd.com page 4 of 6 downloaded from: http:///
AOD2144 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 50 100 150 200 250 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 100 120 140 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction- to-ambient (note h) t a =25 c r ja =50 c/w 0 0.2 0.4 0.6 0.8 1 0 10 20 30 40 eoss(uj) v ds (volts) figure 14: coss stored energy rev.1.0: november 2017 www.aosmd.com page 5 of 6 downloaded from: http:///
AOD2144 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms figure d: diode recovery test circuit & waveforms rev.1.0: november 2017 www.aosmd.com page 6 of 6 downloaded from: http:///
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